inchange semiconductor product specification silicon npn power transistors 2SD1594 description ? ? with to-220fa package ? low collector saturation voltage applications ? low frequency power amplifier ? high speed switching industrial use pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 7 a i cm collector current-peak 15 a i b base current (dc) 3.5 a t a =25 ?? 1.5 p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1594 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =5a , i b1 =0.5a,l=1mh 60 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 0.6 v v besat base-emitter saturation voltage i c =5a; i b =0.5a 1.5 v i cbo collector cut-off current v cb =100v ;i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =0.5a ; v ce =5v 40 h fe-2 dc current gain i c =3a ; v ce =5v 40 240 h fe-3 dc current gain i c =5a ; v ce =5v 20 switching times t on turn-on time 0.5 | s t s storage time 0.5 | s t f fall time i c =5a ;i b1 =0.5a i b2 =-0.5a; v cc =50v r l =10 |? 1.5 | s ? h fe-2 classifications r o y 40-80 70-140 120-240
inchange semiconductor product specification 3 silicon npn power transistors 2SD1594 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
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